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Monolayer Graphene on 90 nm SiO₂/Si GFETMonolayer Graphene on 90 nm SiO Si Fully Covered Processed in ISO 7 Cleanroom Our monolayer graphene on SiO Si (fully covered) is a bidimensional material produced by CVD and transferred to a circular substrate of SiO Si (90nm) by a semi dry transfer process. We consider it to be a benchmark product in the graphene market not only for its excellent quality, but also for its shape, size and number of applications. Graphene Film Growth method: CVD
· Graphene growth
This product is provided with a PMMA coating on top of the Graphene in order ease the transfer process and to avoid contamination
· The Graphene Oxide weight content is guaranteed
A single-layer graphene film on a copper substrate
MSDS Graphene Oxide
- D10 1-2 μm
"Graphene Sensor Arrays for Rapid and Accurate Detection of Pancreatic Cancer Exosomes in Patients’ Blood Plasma Samples"
· Raman Spectroscopy of each fabrication batch
· Raman spectroscopy of each fabrication batch
We consider it to be a benchmark product in the graphene market - not only for its excellent quality
1021/acssensors
Graphene optoelectronics